STGD19N40LZ
- Manufacturer STMicroelectronics
- Part Number STGD19N40LZ
- Description IGBT Transistors Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
- Category IGBT Transistors
Specifications
| Package | DPAK-3 |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 625 uA |
| Continuous Collector Current Ic Max | 25 A |
| Mounting Style | SMD/SMT |
| Product Category | IGBT Transistors |
| Brand | STMicroelectronics |
| Unit Weight | 0.012346 oz |
| Collector- Emitter Voltage VCEO Max | 390 V |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 175 C |
| Maximum Gate Emitter Voltage | 16 V |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1.35 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Series | STGD19N40LZ |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 125 W |
| Technology | Si |
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