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STD2HNK60Z

  • Manufacturer STMicroelectronics
  • Part Number STD2HNK60Z
  • Description MOSFET N Ch 600V Zener SuprMESH 4.4 A
  • Category MOSFET
Specifications
Package TO-252-3
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 600 V
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 3 V
Width 6.2 mm
Qg - Gate Charge 11 nC
Vgs - Gate-Source Voltage 10 V
Fall Time 50 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand STMicroelectronics
Unit Weight 0.139332 oz
Number of Channels 1 Channel
Tradename SuperMESH
Configuration Single
Maximum Operating Temperature + 150 C
Transistor Type 1 N-Channel Power MOSFET
Forward Transconductance - Min 1.5 S
Id - Continuous Drain Current 2 A
Length 6.6 mm
Rds On - Drain-Source Resistance 4.8 Ohms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 23 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series STD2HNK60Z
Height 2.4 mm
Packaging
Typical Turn-On Delay Time 10 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 45 W
Rise Time 30 ns
Technology Si

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