STD1NK80Z-1
- Manufacturer STMicroelectronics
- Part Number STD1NK80Z-1
- Description MOSFET N-Ch, 800V-13ohms 1A
- Category MOSFET
Specifications
| Package | TO-251-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3.75 V |
| Width | 2.4 mm |
| Qg - Gate Charge | 7.7 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 55 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 0.8 S |
| Id - Continuous Drain Current | 1 A |
| Length | 6.6 mm |
| Rds On - Drain-Source Resistance | 16 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 22 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STQ1NK80ZR-AP |
| Height | 6.2 mm |
| Typical Turn-On Delay Time | 8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 45 W |
| Rise Time | 30 ns |
| Technology | Si |
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