STD12N50DM2
- Manufacturer STMicroelectronics
- Part Number STD12N50DM2
- Description MOSFET N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Development Kit | - |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 120 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 9.8 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | 11 A |
| Rds On - Drain-Source Resistance | 350 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 28 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STD12N50DM2 |
| Packaging | |
| Typical Turn-On Delay Time | 12.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 110 W |
| Rise Time | 9 ns |
| Technology | Si |
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