STD11NM60ND
- Manufacturer STMicroelectronics
- Part Number STD11NM60ND
- Description MOSFET N-channel 600V, 10A FDMesh II
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Width | 6.2 mm |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 9 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | FDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 10 A |
| Length | 6.6 mm |
| Rds On - Drain-Source Resistance | 450 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 50 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STD11NM60ND |
| Height | 2.4 mm |
| Packaging | |
| Typical Turn-On Delay Time | 16 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 90 W |
| Rise Time | 7 ns |
| Technology | Si |
Need pricing on STD11NM60ND?
Tell us your quantity and target price. We reply the same business day.