STB7ANM60N
- Manufacturer STMicroelectronics
- Part Number STB7ANM60N
- Description MOSFET N-CH 600V 5A 0.84Ohm MDmesh II
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 900 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 14 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 12 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 5 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 26 ns |
| Subcategory | MOSFETs |
| Series | STB7ANM60N |
| Packaging | |
| Typical Turn-On Delay Time | 7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 45 W |
| Rise Time | 10 ns |
| Technology | Si |
Need pricing on STB7ANM60N?
Tell us your quantity and target price. We reply the same business day.