STB45N60DM2AG
- Manufacturer STMicroelectronics
- Part Number STB45N60DM2AG
- Description MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a D2PAK package
- Category MOSFET
Specifications
| Package | D2PAK-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 93 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Width | 9.35 mm |
| Qg - Gate Charge | 56 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Type | High Voltage |
| Fall Time | 6 ns |
| Mounting Style | SMD/SMT |
| Product | Power MOSFET |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel Power MOSFET |
| Id - Continuous Drain Current | 34 A |
| Length | 10.4 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 85 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STB45N60DM2AG |
| Height | 4.6 mm |
| Packaging | |
| Typical Turn-On Delay Time | 29 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 W |
| Rise Time | 27 ns |
| Technology | Si |
Need pricing on STB45N60DM2AG?
Tell us your quantity and target price. We reply the same business day.