STB33N60DM2
- Manufacturer STMicroelectronics
- Part Number STB33N60DM2
- Description MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Packaging | Reel |
| Min. Pack | 1,000 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 43 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 9 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.079014 oz |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 24 A |
| Rds On - Drain-Source Resistance | 130 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 62 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STB33N60DM2 |
| Typical Turn-On Delay Time | 17 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 190 W |
| Rise Time | 8 ns |
| Technology | Si |
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