STB32N65M5
- Manufacturer STMicroelectronics
- Part Number STB32N65M5
- Description MOSFET POWER MOSFET N-CH 650V
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 72 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Type | Power MOSFET |
| Fall Time | 16 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 24 A |
| Rds On - Drain-Source Resistance | 95 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 56 ns |
| Subcategory | MOSFETs |
| Series | STB32N65M5 |
| Packaging | |
| Typical Turn-On Delay Time | 53 ns |
| Pd - Power Dissipation | 150 W |
| Rise Time | 12 ns |
| Technology | Si |
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