STB27NM60ND
- Manufacturer STMicroelectronics
- Part Number STB27NM60ND
- Description MOSFET N-Ch Power Mosfet 600V STripFET D2PAK
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 130 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 80 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 40 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 17 S |
| Id - Continuous Drain Current | 21 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 50 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STB27NM60ND |
| Packaging | |
| Typical Turn-On Delay Time | 60 ns |
| Pd - Power Dissipation | 160 W |
| Rise Time | 30 ns |
| Technology | Si |
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