STB20NM50FDT4
- Manufacturer STMicroelectronics
- Part Number STB20NM50FDT4
- Description MOSFET N-Ch 500 Volt 20 Amp
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Width | 9.35 mm |
| Qg - Gate Charge | 38 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Type | MOSFET |
| Fall Time | 15 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | FDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 20 A |
| Length | 10.4 mm |
| Rds On - Drain-Source Resistance | 250 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STB20NM50FD |
| Height | 4.6 mm |
| Packaging | |
| Typical Turn-On Delay Time | 22 ns |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 192 W |
| Rise Time | 20 ns |
| Technology | Si |
Need pricing on STB20NM50FDT4?
Tell us your quantity and target price. We reply the same business day.