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STB10NK60Z-1

  • Manufacturer STMicroelectronics
  • Part Number STB10NK60Z-1
  • Description MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
  • Category MOSFET
Specifications
Package TO-262-3
Packaging Tube
Min. Pack 1,000
Vds - Drain-Source Breakdown Voltage 600 V
Transistor Polarity N-Channel
Width 4.4 mm
Qg - Gate Charge 50 nC
Vgs - Gate-Source Voltage 30 V
Type MOSFET
Fall Time 30 ns
Mounting Style Through Hole
Product Category MOSFET
Brand STMicroelectronics
Unit Weight 0.050717 oz
Number of Channels 1 Channel
Tradename SuperMESH
Configuration Single
Maximum Operating Temperature + 150 C
Transistor Type 1 N-Channel
Forward Transconductance - Min 7.8 S
Id - Continuous Drain Current 10 A
Length 10 mm
Rds On - Drain-Source Resistance 750 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 55 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series STB10NK60Z
Height 8.95 mm
Typical Turn-On Delay Time 20 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 115 W
Rise Time 20 ns
Technology Si

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