STB10N60M2
- Manufacturer STMicroelectronics
- Part Number STB10N60M2
- Description MOSFET N-Ch 600V 0.55 Ohm typ. 7.5A
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 13.5 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 13.2 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 7.5 A |
| Rds On - Drain-Source Resistance | 600 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 32.5 ns |
| Subcategory | MOSFETs |
| Series | STB10N60M2 |
| Packaging | |
| Typical Turn-On Delay Time | 8.8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 85 W |
| Rise Time | 8 ns |
| Technology | Si |
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