STB100N10F7
- Manufacturer STMicroelectronics
- Part Number STB100N10F7
- Description MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V |
| Qg - Gate Charge | 61 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 15 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | STripFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance | 8 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 46 ns |
| Subcategory | MOSFETs |
| Series | STB100N10F7 |
| Packaging | |
| Typical Turn-On Delay Time | 27 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 150 W |
| Rise Time | 40 ns |
| Technology | Si |
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