SSM6P36FE,LM
- Manufacturer Toshiba
- Part Number SSM6P36FE,LM
- Description MOSFET Small Signal MOSFET
- Category MOSFET
Specifications
| Package | ES6-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 300 mV |
| Width | 1.2 mm |
| Qg - Gate Charge | 1.2 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.000289 oz |
| Number of Channels | 2 Channel |
| Tradename | U-MOSIII |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 330 mA |
| Length | 1.6 mm |
| Rds On - Drain-Source Resistance | 3.6 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SSM6P36 |
| Height | 0.55 mm |
| Packaging | |
| Pd - Power Dissipation | 150 mW |
| Technology | Si |
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