SSM6N7002KFU,LF
- Manufacturer Toshiba
- Part Number SSM6N7002KFU,LF
- Description MOSFET Small-signal MOSFET 2in1 ESD Protected
- Category MOSFET
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Width | 1.25 mm |
| Qg - Gate Charge | 0.39 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 17 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.000265 oz |
| Number of Channels | 2 Channel |
| Tradename | U-MOSVII-H |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 1 S |
| Id - Continuous Drain Current | 300 mA |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 1.5 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 38 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SSM6N7002 |
| Height | 0.9 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5.5 ns |
| Pd - Power Dissipation | 500 mW |
| Rise Time | 3.6 ns |
| Technology | Si |
Need pricing on SSM6N7002KFU,LF?
Tell us your quantity and target price. We reply the same business day.