SSM6N7002FUTE85LF
- Manufacturer Toshiba
- Part Number SSM6N7002FUTE85LF
- Description MOSFET SMOS
- Category MOSFET
Specifications
| Package | SOT-363-6 |
| Packaging | Reel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Width | 1.25 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 72 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.000265 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 170 mS |
| Id - Continuous Drain Current | 200 mA |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 3.3 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 69 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SSM6N7002 |
| Height | 0.9 mm |
| Typical Turn-On Delay Time | 18 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 300 mW |
| Rise Time | 72 ns |
| Technology | Si |
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