SSM6N61NU,LF
- Manufacturer Toshiba
- Part Number SSM6N61NU,LF
- Description MOSFET Small-signal MOSFET 2 in 1 Nch ID: 4A
- Category MOSFET
Specifications
| Package | UDFN-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Width | 2 mm |
| Qg - Gate Charge | 3.6 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Type | Silicon N-Channel MOS |
| Mounting Style | SMD/SMT |
| Product | MOSFETs |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 2 Channel |
| Tradename | U-MOSVII-H |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 12 S |
| Id - Continuous Drain Current | 4 A |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 108 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 45 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SSM6N61 |
| Height | 0.75 mm |
| Packaging | |
| Typical Turn-On Delay Time | 25 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2 W |
| Technology | Si |
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