SSM6N55NU,LF
- Manufacturer Toshiba
- Part Number SSM6N55NU,LF
- Description MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD
- Category MOSFET
Specifications
| Package | UDFN-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Width | 2 mm |
| Qg - Gate Charge | 2.5 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 2 Channel |
| Tradename | U-MOSVII-H |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Id - Continuous Drain Current | 4 A |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 64 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Series | SSM6N55 |
| Height | 0.75 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1 W |
| Technology | Si |
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