SSM6N39TU,LF
- Manufacturer Toshiba
- Part Number SSM6N39TU,LF
- Description MOSFET LowON Res MOSFET ID=1.6A VDSS=20V
- Category MOSFET
Specifications
| Package | UF-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 350 mV |
| Qg - Gate Charge | 7.5 nC, 7.5 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.000247 oz |
| Number of Channels | 2 Channel |
| Tradename | U-MOSIII |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 2.5 S, 2.5 S |
| Id - Continuous Drain Current | 1.6 A |
| Rds On - Drain-Source Resistance | 87 mOhms, 87 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 8.3 ns, 8.3 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SSM6N39TU |
| Packaging | |
| Typical Turn-On Delay Time | 11.5 ns, 11.5 ns |
| Pd - Power Dissipation | 500 mW |
| Technology | Si |
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