SSM6L61NU,LF
- Manufacturer Toshiba
- Part Number SSM6L61NU,LF
- Description MOSFET Small-signal MOSFET 2 in 1 Nch+Pch ID:4A
- Category MOSFET
Specifications
| Package | UDFN-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 400 mV, 500 mV |
| Width | 2 mm |
| Qg - Gate Charge | 3.6 nC, 6.74 nC |
| Vgs - Gate-Source Voltage | 8 V, 12 V |
| Type | Silicon P-/N-Channel MOS |
| Fall Time | - |
| Mounting Style | SMD/SMT |
| Product | MOSFETs |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 2 Channel |
| Tradename | U-MOSVII-H / U-MOSVI |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Forward Transconductance - Min | 12 S, 9.5 S |
| Id - Continuous Drain Current | 4 A |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 108 mOhms, 157 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 45 ns, 54 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | UMOSIX |
| Height | 0.75 mm |
| Packaging | |
| Typical Turn-On Delay Time | 25 ns, 21 ns |
| Minimum Operating Temperature | - |
| Pd - Power Dissipation | 2 W |
| Rise Time | - |
| Technology | Si |
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