SSM6L09FUTE85LF
- Manufacturer Toshiba
- Part Number SSM6L09FUTE85LF
- Description MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V
- Category MOSFET
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.8 V |
| Width | 1.25 mm |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.000265 oz |
| Number of Channels | 2 Channel |
| Product Type | MOSFET |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Id - Continuous Drain Current | 400 mA |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 4 Ohms |
| RoHS | Y |
| Configuration | Dual |
| Typical Turn-Off Delay Time | 68 ns, 85 ns |
| Subcategory | MOSFETs |
| Series | SSM6L09 |
| Height | 0.9 mm |
| Packaging | |
| Typical Turn-On Delay Time | 72 ns, 85 ns |
| Pd - Power Dissipation | 300 mW |
| Technology | Si |
Need pricing on SSM6L09FUTE85LF?
Tell us your quantity and target price. We reply the same business day.