SSM6J213FE(TE85L,F
- Manufacturer Toshiba
- Part Number SSM6J213FE(TE85L,F
- Description MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF
- Category MOSFET
Specifications
| Package | ES6-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Width | 1.2 mm |
| Qg - Gate Charge | 4.7 nC |
| Vgs - Gate-Source Voltage | 8 V |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.001270 oz |
| Number of Channels | 1 Channel |
| Tradename | U-MOSVI |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Id - Continuous Drain Current | 2.6 A |
| Length | 1.6 mm |
| Rds On - Drain-Source Resistance | 250 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Series | SSM6J213 |
| Height | 0.55 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Technology | Si |
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