SSM5N16FUTE85LF
- Manufacturer Toshiba
- Part Number SSM5N16FUTE85LF
- Description MOSFET N-Ch Sm Sig FET 0.1A 20V 2-in-1
- Category MOSFET
Specifications
| Package | SOT-353-5 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
| Width | 1.25 mm |
| Vgs - Gate-Source Voltage | 10 V |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.000212 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 40 mS |
| Id - Continuous Drain Current | 100 mA |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 3 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 125 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SSM5N16FU |
| Height | 0.9 mm |
| Packaging | |
| Typical Turn-On Delay Time | 70 ns |
| Pd - Power Dissipation | 200 mW |
| Technology | Si |
Need pricing on SSM5N16FUTE85LF?
Tell us your quantity and target price. We reply the same business day.