SSM3J66MFV,L3F
- Manufacturer Toshiba
- Part Number SSM3J66MFV,L3F
- Description MOSFET Small Signal MOSFET P-ch VDSS=-20V, VGSS=+6/-8V, ID=-0.8A, RDS(ON)=0.39Ohm @ 4.5V, in VESM package
- Category MOSFET
Specifications
| Package | VESM-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | - 1 V |
| Qg - Gate Charge | 1.6 nC |
| Vgs - Gate-Source Voltage | - 8 V, 6 V |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | U-MOSVI |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Id - Continuous Drain Current | 0.8 A |
| Rds On - Drain-Source Resistance | 4 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 26 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SSM3J66MF |
| Packaging | |
| Typical Turn-On Delay Time | 8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 150 mW |
| Technology | Si |
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