SSM3J112TU(TE85L)
- Manufacturer Toshiba
- Part Number SSM3J112TU(TE85L)
- Description MOSFET Vds=-30V Id=-1.1A 3Pin
- Category MOSFET
Specifications
| Package | UFM-3 |
| Packaging | Reel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | P-Channel |
| Width | 1.7 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Type | Small Signal |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.004395 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 1 S / 0.5 S |
| Id - Continuous Drain Current | 1.1 A |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 610 mOhms |
| RoHS | N |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SSM3J112TU |
| Height | 0.7 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 800 mW |
| Technology | Si |
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