SQV120N10-3M8_GE3
- Manufacturer Vishay / Siliconix
- Part Number SQV120N10-3M8_GE3
- Description MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified
- Category MOSFET
Specifications
| Package | TO-262-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 3 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Width | 4.83 mm |
| Qg - Gate Charge | 190 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 12 ns |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.070548 oz |
| Number of Channels | 1 Channel |
| Tradename | TrenchFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 120 A |
| Length | 10.67 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 40 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SQ |
| Height | 9.65 mm |
| Mounting Style | Through Hole |
| Typical Turn-On Delay Time | 16 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 W |
| Rise Time | 110 ns |
| Technology | Si |
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