SQP90142E_GE3
- Manufacturer Vishay / Siliconix
- Part Number SQP90142E_GE3
- Description MOSFET 200v Vds 78.5A Id AEC-Q101 Qualified
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 15.3 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 55 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 16 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.063493 oz |
| Number of Channels | 1 Channel |
| Tradename | TrenchFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Id - Continuous Drain Current | 95 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 39 ns |
| Subcategory | MOSFETs |
| Series | SQ |
| Typical Turn-On Delay Time | 17 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 375 W |
| Rise Time | 8 ns |
| Technology | Si |
Need pricing on SQP90142E_GE3?
Tell us your quantity and target price. We reply the same business day.