SQJ990EP-T1_GE3
- Manufacturer Vishay / Siliconix
- Part Number SQJ990EP-T1_GE3
- Description MOSFET Dual N-Ch 100V Vds AEC-Q101 Qualified
- Category MOSFET
Specifications
| Package | PowerPAK-SO-8L-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 32.5 mOhms, 15.4 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Width | 5.13 mm |
| Qg - Gate Charge | 15 nC, 30 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 21 ns, 22 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.017870 oz |
| Number of Channels | 2 Channel |
| Tradename | TrenchFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 17 S, 34 S |
| Id - Continuous Drain Current | 17 A, 34 A |
| Length | 6.15 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 22 ns, 28 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SQ |
| Height | 1.04 mm |
| Packaging | |
| Typical Turn-On Delay Time | 8 ns, 12 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 27 W, 48 W |
| Rise Time | 3 ns, 3 ns |
| Technology | Si |
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