SQJ942EP-T1_GE3
- Manufacturer Vishay / Siliconix
- Part Number SQJ942EP-T1_GE3
- Description MOSFET 40V 15A AEC-Q101 Qualified
- Category MOSFET
Specifications
| Package | PowerPAK-SO-8L-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 18 mOhms, 9 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Width | 5.13 mm |
| Qg - Gate Charge | 19.7 nC, 33.8 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 12 ns, 16 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.017870 oz |
| Number of Channels | 2 Channel |
| Tradename | TrenchFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 46 S, 73 S |
| Id - Continuous Drain Current | 15 A, 45 A |
| Length | 6.15 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 29 ns, 52 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SQ |
| Height | 1.04 mm |
| Packaging | |
| Typical Turn-On Delay Time | 33 ns, 40 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 17 W, 48 W |
| Rise Time | 25 ns, 31 ns |
| Technology | Si |
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