SQJ504EP-T1_GE3
- Manufacturer Vishay / Siliconix
- Part Number SQJ504EP-T1_GE3
- Description MOSFET 40/-40V Vds; SO-8L +/-20V Vgs
- Category MOSFET
Specifications
| Package | PowerPAK-SO-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V, 2.5 V |
| Qg - Gate Charge | 30 nC, 85 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 5 ns, 7 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 175 C |
| Forward Transconductance - Min | 35 S, 30 S |
| Id - Continuous Drain Current | 30 A |
| Rds On - Drain-Source Resistance | 7.5 mOhms, 17 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 21 ns, 45 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 11 ns, 15 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 34 W |
| Rise Time | 4 ns, 6 ns |
| Technology | Si |
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