SQD40N10-25-T4_GE3
- Manufacturer Vishay / Siliconix
- Part Number SQD40N10-25-T4_GE3
- Description MOSFET RECOMMENDED ALT 78-SQD70140EL_GE3
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 2,500 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 5.6 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 55 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 1 Channel |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 175 C |
| Id - Continuous Drain Current | 50 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 71 W |
| Technology | Si |
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