SQD10N30-330H_GE3
- Manufacturer Vishay / Siliconix
- Part Number SQD10N30-330H_GE3
- Description MOSFET N Ch 300Vds 30Vgs AEC-Q101 Qualified
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 300 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 275 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 3.4 V |
| Width | 6.22 mm |
| Qg - Gate Charge | 47 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 8 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.011993 oz |
| Number of Channels | 1 Channel |
| Tradename | TrenchFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 26 S |
| Id - Continuous Drain Current | 10 A |
| Length | 6.73 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 20 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SQ |
| Height | 2.38 mm |
| Packaging | |
| Typical Turn-On Delay Time | 10 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 107 W |
| Rise Time | 18 ns |
| Technology | Si |
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