SQ3585EV-T1_GE3
- Manufacturer Vishay / Siliconix
- Part Number SQ3585EV-T1_GE3
- Description MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
- Category MOSFET
Specifications
| Package | TSOP-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel, P-Channel |
| Rds On - Drain-Source Resistance | 49 mOhms, 140 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 600 mV, 1.5 V |
| Qg - Gate Charge | 2.5 nC, 3.5 nC |
| Vgs - Gate-Source Voltage | 12 V |
| Fall Time | 8 ns, 14 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 2 Channel |
| Tradename | TrenchFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Forward Transconductance - Min | 10 S, 3 S |
| Id - Continuous Drain Current | 3.57 A, 2.5 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 22 ns, 29 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SQ |
| Packaging | |
| Typical Turn-On Delay Time | 9 ns, 7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.67 W |
| Rise Time | 15 ns, 16 ns |
| Technology | Si |
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