SPP08P06P H
- Manufacturer Infineon Technologies
- Part Number SPP08P06P H
- Description MOSFET P-Ch -60V -8.8A TO220-3
- Category MOSFET
Specifications
| Package | PG-TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Width | 4.4 mm |
| Qg - Gate Charge | 10 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | SP000446908 SPP08P06PHXKSA1 SPP8P6PHXK |
| Fall Time | 14 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.211644 oz |
| Number of Channels | 1 Channel |
| Tradename | SIPMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 1.5 S |
| Id - Continuous Drain Current | 8.8 A |
| Length | 10 mm |
| Rds On - Drain-Source Resistance | 300 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 48 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SPP08P06 |
| Height | 15.65 mm |
| Typical Turn-On Delay Time | 16 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 42 W |
| Rise Time | 46 ns |
| Technology | Si |
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