SPD08P06PGXT
- Manufacturer Infineon Technologies
- Part Number SPD08P06PGXT
- Description MOSFET P-Ch -60V -8.8A DPAK-2
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | P-Channel |
| Rds On - Drain-Source Resistance | 230 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Width | 6.22 mm |
| Qg - Gate Charge | - 13 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | G SP000450534 SPD08P06P SPD08P06PGBTMA1 |
| Fall Time | 14 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.011993 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 2.5 S |
| Id - Continuous Drain Current | 8.83 A |
| Length | 6.5 mm |
| Qualification | AEC-Q101 |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 48 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 2.3 mm |
| Packaging | |
| Typical Turn-On Delay Time | 16 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 42 W |
| Rise Time | 46 ns |
| Technology | Si |
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