SP000934750
- Manufacturer Infineon Technologies
- Part Number SP000934750
- Description MOSFET N-Ch 30V,30V 40A,40A TISON-8
- Category MOSFET
Specifications
| Package | TISON-8 |
| Packaging | Reel |
| Min. Pack | 5,000 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Width | 5 mm |
| Qg - Gate Charge | 10 nC, 12.8 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | BSC0924 BSC0924NDI BSC0924NDIATMA1 SP000934750 |
| Fall Time | 3 ns, 2.2 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 2 Channel |
| Tradename | OptiMOS |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 32 S, 36 S |
| Id - Continuous Drain Current | 40 A |
| Length | 6 mm |
| Rds On - Drain-Source Resistance | 3.8 mOhms, 2.8 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 17 ns, 15 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 1.15 mm |
| Typical Turn-On Delay Time | 4.7 ns, 3.3 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.5 W |
| Rise Time | 3.8 ns, 2.8 ns |
| Technology | Si |
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