SIZF920DT-T1-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIZF920DT-T1-GE3
- Description MOSFET Dual 30V Vds PowerPAIR 6x5F
- Category MOSFET
Specifications
| Package | PowerPAIR 6x5F-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Qg - Gate Charge | 29 nC, 125 nC |
| Vgs - Gate-Source Voltage | - 16 V, 20 V, - 12 V, 16 V |
| Fall Time | 5 ns, 10 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 2 Channel |
| Tradename | TrenchFET; PowerPAK |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 65 S, 135 S |
| Id - Continuous Drain Current | 76 A, 197 A |
| Rds On - Drain-Source Resistance | 3.07 mOhms, 1.05 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 20 ns, 43 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 11 ns, 17 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 28 W, 74 W |
| Rise Time | 5 ns, 70 ns |
| Technology | Si |
Need pricing on SIZF920DT-T1-GE3?
Tell us your quantity and target price. We reply the same business day.