SIZ710DT-T1-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIZ710DT-T1-GE3
- Description MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
- Category MOSFET
Specifications
| Package | PowerPAIR-6x3.7-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 18 nC, 60 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | SIZ710DT-GE3 |
| Fall Time | 12 ns, 12 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 2 Channel |
| Tradename | TrenchFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 45 S, 85 S |
| Id - Continuous Drain Current | 16 A, 35 A |
| Rds On - Drain-Source Resistance | 6.8 mOhms, 3.3 mOhms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 20 ns, 30 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SIZ |
| Packaging | |
| Typical Turn-On Delay Time | 15 ns, 25 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 27 W, 48 W |
| Rise Time | 15 ns, 15 ns |
| Technology | Si |
Need pricing on SIZ710DT-T1-GE3?
Tell us your quantity and target price. We reply the same business day.