SIZ346DT-T1-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIZ346DT-T1-GE3
- Description MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
- Category MOSFET
Specifications
| Package | PowerPAIR-3x3-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.2 V, 2.4 V |
| Qg - Gate Charge | 6.6 nC, 10 nC |
| Vgs - Gate-Source Voltage | - 16 V, 20 V |
| Fall Time | 7 ns, 8 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 2 Channel |
| Tradename | TrenchFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 17 S |
| Id - Continuous Drain Current | 17 A, 30 A |
| Rds On - Drain-Source Resistance | 11.5 mOhms, 28.5 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 7 ns, 17 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SIZ |
| Packaging | |
| Typical Turn-On Delay Time | 7 ns, 8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 16 W, 16.7 W |
| Rise Time | 15 ns, 40 ns |
| Technology | Si |
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