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SIZ320DT-T1-GE3

  • Manufacturer Vishay / Siliconix
  • Part Number SIZ320DT-T1-GE3
  • Description MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3
  • Category MOSFET
Specifications
Package PowerPAIR-3x3-8
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 25 V
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 2.4 V
Qg - Gate Charge 9.5 nC, 17.8 nC
Vgs - Gate-Source Voltage - 12 V, 16 V
Fall Time 10 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand Vishay / Siliconix
Number of Channels 2 Channel
Tradename TrenchFET
Configuration Dual
Maximum Operating Temperature + 150 C
Transistor Type 2 N-Channel
Forward Transconductance - Min 45 S, 68 S
Id - Continuous Drain Current 30 A, 40 A
Rds On - Drain-Source Resistance 4.24 mOhms, 8.3 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 15 ns, 20 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series SIZ
Packaging
Typical Turn-On Delay Time 8 ns, 12 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 16.7 W, 31 W
Rise Time 28 ns, 45 ns
Technology Si

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