SIZ200DT-T1-GE3
- Manufacturer Vishay
- Part Number SIZ200DT-T1-GE3
- Description MOSFET 30V Vds 20/-16V Vgs PowerPAIR 3x3S
- Category MOSFET
Specifications
| Package | PowerPAIR-3x3S-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Qg - Gate Charge | 28 nC, 30 nC |
| Vgs - Gate-Source Voltage | - 16 V, 20 V |
| Fall Time | 5 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay |
| Number of Channels | 2 Channel |
| Tradename | TrenchFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 118 S, 105 S |
| Id - Continuous Drain Current | 61 A, 60 A |
| Rds On - Drain-Source Resistance | 5.5 mOhms, 5.8 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 23 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SIZ |
| Packaging | |
| Typical Turn-On Delay Time | 11 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 33 W |
| Rise Time | 5 ns |
| Technology | Si |
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