SIRA12DP-T1-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIRA12DP-T1-GE3
- Description MOSFET 30V 4.3mOhm@10V 25A N-Ch G-IV
- Category MOSFET
Specifications
| Package | PowerPAK-SO-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Width | 5.15 mm |
| Qg - Gate Charge | 45 nC |
| Vgs - Gate-Source Voltage | 20 V, - 16 V |
| Part # Aliases | SIRA12DP-GE3 |
| Fall Time | 10 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.017870 oz |
| Number of Channels | 1 Channel |
| Tradename | TrenchFET, PowerPAK |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 51 S |
| Id - Continuous Drain Current | 60 A |
| Length | 6.15 mm |
| Rds On - Drain-Source Resistance | 3.2 mOhms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 25 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SIR |
| Height | 1.04 mm |
| Packaging | |
| Typical Turn-On Delay Time | 10 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 31 W |
| Rise Time | 10 ns |
| Technology | Si |
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