SIHU7N60E-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIHU7N60E-GE3
- Description MOSFET 600V Vds 30V Vgs IPAK (TO-251)
- Category MOSFET
Specifications
| Package | TO-251-3 |
| Packaging | Tube |
| Min. Pack | 3,000 |
| Vds - Drain-Source Breakdown Voltage | 609 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 20 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 14 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.011640 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 7 A |
| Rds On - Drain-Source Resistance | 600 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 24 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | E |
| Typical Turn-On Delay Time | 13 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 78 W |
| Rise Time | 13 ns |
| Technology | Si |
Need pricing on SIHU7N60E-GE3?
Tell us your quantity and target price. We reply the same business day.