SIHU4N80AE-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIHU4N80AE-GE3
- Description MOSFET Nch 800V Vds 30V Vgs TO-251
- Category MOSFET
Specifications
| Package | TO-251-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 32 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 20 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 1.5 S |
| Id - Continuous Drain Current | 4.3 A |
| Rds On - Drain-Source Resistance | 1.27 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 26 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | E |
| Typical Turn-On Delay Time | 12 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 69 W |
| Rise Time | 7 ns |
| Technology | Si |
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