SIHS20N50C-E3
- Manufacturer Vishay / Siliconix
- Part Number SIHS20N50C-E3
- Description MOSFET 500V Vds 30V Vgs Super-247
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Min. Pack | 500 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Width | 5.3 mm |
| Qg - Gate Charge | 65 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 44 ns |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.211644 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 20 A |
| Length | 16.1 mm |
| Rds On - Drain-Source Resistance | 270 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 32 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 20.8 mm |
| Mounting Style | Through Hole |
| Typical Turn-On Delay Time | 80 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 W |
| Rise Time | 27 ns |
| Technology | Si |
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