SIHG32N50D-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIHG32N50D-GE3
- Description MOSFET 500V Vds 30V Vgs TO-247AC
- Category MOSFET
Specifications
| Package | TO-247AC-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Width | 5.31 mm |
| Qg - Gate Charge | 64 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 55 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 1.340411 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 30 A |
| Length | 15.87 mm |
| Rds On - Drain-Source Resistance | 150 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 58 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | D |
| Height | 20.82 mm |
| Typical Turn-On Delay Time | 27 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 390 W |
| Rise Time | 75 ns |
| Technology | Si |
Need pricing on SIHG32N50D-GE3?
Tell us your quantity and target price. We reply the same business day.