SIHFU9220-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIHFU9220-GE3
- Description MOSFET -200V Vds 20V Vgs IPAK (TO-251)
- Category MOSFET
Specifications
| Package | TO-251-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | - 4 V |
| Qg - Gate Charge | 20 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 19 ns |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 1.1 S |
| Id - Continuous Drain Current | 3.6 A |
| Rds On - Drain-Source Resistance | 1.5 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 7.3 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | E |
| Mounting Style | Through Hole |
| Typical Turn-On Delay Time | 8.8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 42 W |
| Rise Time | 27 ns |
| Technology | Si |
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