SIHFL110TR-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIHFL110TR-GE3
- Description MOSFET 100V Vds 20V Vgs SOT-223
- Category MOSFET
Specifications
| Package | SOT-223-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 3.5 mm |
| Qg - Gate Charge | 8.3 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 9.4 ns |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 1.1 S |
| Id - Continuous Drain Current | 1.5 A |
| Length | 6.5 mm |
| Rds On - Drain-Source Resistance | 540 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 15 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 1.8 mm |
| Mounting Style | SMD/SMT |
| Typical Turn-On Delay Time | 6.9 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 3.1 W |
| Rise Time | 16 ns |
| Technology | Si |
Need pricing on SIHFL110TR-GE3?
Tell us your quantity and target price. We reply the same business day.