SIHF640S-GE3
- Manufacturer Vishay / Siliconix
- Part Number SIHF640S-GE3
- Description MOSFET 200V Vds 20V Vgs D2PAK (TO-263)
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 9.65 mm |
| Qg - Gate Charge | 70 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 36 ns |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 6.7 S |
| Id - Continuous Drain Current | 18 A |
| Length | 10.67 mm |
| Rds On - Drain-Source Resistance | 180 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 45 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 4.83 mm |
| Mounting Style | SMD/SMT |
| Typical Turn-On Delay Time | 14 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 130 W |
| Rise Time | 51 ns |
| Technology | Si |
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